| 摘要 |
<p>The device consists of a substrate of mono-crystalline silicon (2) containing an integrated circuit (3) comprising an oscillator containing a resonator, a maintenance circuit for vibrating the resonator and a frequency division chain. The maintenance circuit and the frequency division chain are made from CMOS circuits. The resonator is integrated (4) and formed from a body cut in a defined thin part of the superficial region (14) of the substrate. A thin layer of piezoelectric material is deposited on at least a part of this body, and a thin metallic layer is deposited on the piezoelectric layer to form an electrode. The resonator structure may include a central load bar associated with two extreme parts (7,7') which form terminal masses. The piezoelectric material is only deposited on the central section.</p> |
