发明名称 Fabrication method of superconducting quantum interference device constructed from short weak links with ultrafine metallic wires
摘要 A method of fabricating a superconducting quantum interference device (DC-SQUID) constructed from short weak links with untrafine wires. The method comprises the following steps: successive forming a niobium nitride film and a silicon nitride film on a substrate; oblique etching of the niobium nitride film and said silicon nitride film with respect to the substrate by a reactive ion etching process using a mixture of oxygen and CF4 gases to form an olique edge; and successive forming a barrier thin film and a counterelectrode of niobium on the said edge. The short weak links wire fabricated by field evaporation technique. The counterelectrode material were field-evaporated and formed the conductive paths in the pinholes in the insulating thin film.
申请公布号 US5665980(A) 申请公布日期 1997.09.09
申请号 US19940259156 申请日期 1994.06.13
申请人 SHINKO ELECTRIC INDUSTRIES CO., LTD. 发明人 ONUMA, YOSHIO;HAMASAKI, KATSUYOSHI
分类号 H01L39/22;H01L39/24;(IPC1-7):H01L29/06 主分类号 H01L39/22
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