发明名称 |
Fabrication method of superconducting quantum interference device constructed from short weak links with ultrafine metallic wires |
摘要 |
A method of fabricating a superconducting quantum interference device (DC-SQUID) constructed from short weak links with untrafine wires. The method comprises the following steps: successive forming a niobium nitride film and a silicon nitride film on a substrate; oblique etching of the niobium nitride film and said silicon nitride film with respect to the substrate by a reactive ion etching process using a mixture of oxygen and CF4 gases to form an olique edge; and successive forming a barrier thin film and a counterelectrode of niobium on the said edge. The short weak links wire fabricated by field evaporation technique. The counterelectrode material were field-evaporated and formed the conductive paths in the pinholes in the insulating thin film.
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申请公布号 |
US5665980(A) |
申请公布日期 |
1997.09.09 |
申请号 |
US19940259156 |
申请日期 |
1994.06.13 |
申请人 |
SHINKO ELECTRIC INDUSTRIES CO., LTD. |
发明人 |
ONUMA, YOSHIO;HAMASAKI, KATSUYOSHI |
分类号 |
H01L39/22;H01L39/24;(IPC1-7):H01L29/06 |
主分类号 |
H01L39/22 |
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