| 摘要 |
<p>PROBLEM TO BE SOLVED: To rewrite data at a lost cost. SOLUTION: This is a semiconductor nonvolatile memory device having one erasing state DATA-E0 and two program states Data-P1, Data-P2 assigned for one memory transistor. At the first, programming time of data, data are programmed to the shallow state Data-P1. At the second programming time, data are programmed to the deep state Data-P2. Accordingly, program data can be rewritten without an erasure operation.</p> |
