| 摘要 |
<p>A vertical diode is provided having a diode opening (24) extending through an insulation layer (20) and contacting an active region (18) on a silicon wafer (12). A titanium silicide layer (66) covers the interior surface (65) of the diode opening (24) and contacts the active region (18). The diode opening (24) is initially filled with an amorphous silicon plug (38) that is doped during deposition and subsequently recrystallized to form large grain polysilicon. The silicon plug (38) has a top portion (42) that is heavily doped with a first type dopant and a bottom portion (44) that is lightly doped with a second type dopant. The top portion is bounded by the bottom portion so as not to contact the titanium silicide layer (66). For one embodiment of the vertical diode, a programmable resistor contacts the top portion (42) of the silicon plug (38) and a metal line (48) contacts the programmable resistor.</p> |
