| 摘要 |
PURPOSE:To highly integrated a nonvolatile memory by forming a floating gate electrode on the sidewall of a step, so forming a control gate electrode to cover the floating gate electrode, and forming its channel region on the sidewall of the step. CONSTITUTION:A channel region is formed on the protrusion 11 of the sidewall 12 of a step in such a manner that the direction of its channel length is perpendicular to the main face 10a of a substrate. Since a floating gate electrode 16 is formed on the sidewall 12 of the step and a control gate electrode 18 covers the electrode 16, the transistor of a memory cell becomes small in its occupying area in its plane. Thus, a memory can be easily highly integrated. |
