| 摘要 |
<p>PROBLEM TO BE SOLVED: To block the water content and impurity from entering from an interlayer insulation film and reduce the capacitances formed between a thin film transistor and pixel electrodes or interconnection. SOLUTION: An interlayer insulation film 116 uses a resin material having a low specific dielectric constant and formed so that a silicon oxide film 115 contacts with the entire lower face thereof. This makes the surface flat and provides such effect that the capacitance formed between a thin film transistor and pixel electrodes can be reduced. Owing to this, such trouble is avoidable that impurity ions and water content intrude into the lower face of the resin material to lower the reliability of the entire semiconductor device.</p> |
