| 摘要 |
A method for forming poly-silicide conductors (CG,GAP) on a semiconductor device (10) includes forming a layer (14) of doped polysilicon over a region of the device (10), then depositing a layer (15) of refractory metal on the layer (14) of doped polysilicon. The layer (14) of doped polysilicon and the layer (15) of refractory metal are then annealed to form a poly-silicide layer (PSL). The poly-silicide layer (PSL) is then etched to form the poly-silicide conductors (CG,GAP).
|
