发明名称 |
Three-dimensional etching process |
摘要 |
A method of forming three-dimensional structures on a substrate by a single reactive ion each run whereby a mask is formed on said substrate before a series of iterations are carried out, each iteration including a mask etch and a substrate etch, so that successive iterations give life to reduction in the mask area and exposure of further areas of substrate. |
申请公布号 |
AU1388497(A) |
申请公布日期 |
1997.08.01 |
申请号 |
AU19970013884 |
申请日期 |
1997.01.09 |
申请人 |
SECR DEFENCE |
发明人 |
DUTTON DAVID THOMAS;DEAN ANTHONY BRIAN |
分类号 |
G02B3/00;G03F7/00;G03F7/40;H01L21/033;H01L21/302;H01L21/3065 |
主分类号 |
G02B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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