发明名称 Three-dimensional etching process
摘要 A method of forming three-dimensional structures on a substrate by a single reactive ion each run whereby a mask is formed on said substrate before a series of iterations are carried out, each iteration including a mask etch and a substrate etch, so that successive iterations give life to reduction in the mask area and exposure of further areas of substrate.
申请公布号 AU1388497(A) 申请公布日期 1997.08.01
申请号 AU19970013884 申请日期 1997.01.09
申请人 SECR DEFENCE 发明人 DUTTON DAVID THOMAS;DEAN ANTHONY BRIAN
分类号 G02B3/00;G03F7/00;G03F7/40;H01L21/033;H01L21/302;H01L21/3065 主分类号 G02B3/00
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