METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT

摘要

Manufacture is made of a semiconductor integrated circuit wherein the sheet resistivity of the polycrystalline silicon is low and the reproducibility of this sheet resistivity is very high. A manufacturing method for manufacturing the semiconductor integrated circuit is comprised of a step of forming a silicon nitride film on a metal wiring by the use of a plasma CVD method and a step of, after having had the silicon nitride film, performing heat treatment with respect to the resulting structure at a temperature of from 400 DEG C to 480 DEG C. <IMAGE>