发明名称 |
Semiconductor device and a method of manufacturing thereof |
摘要 |
According to a semiconductor device and a method of manufacturing thereof, a sidewall spacer is formed at a sidewall of a contact hole, in a recess portion defined by the sidewall of the contact hole and a buried conductive layer, having a film thickness gradually increasing from a top face corner of an interlayer insulation film to the surface of the buried conductive layer. Therefore, a semiconductor device that can achieve favorable breakdown voltage and anti-leak characteristics between a lower electrode layer and an upper electrode layer forming a capacitor of a DRAM.
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申请公布号 |
US5652186(A) |
申请公布日期 |
1997.07.29 |
申请号 |
US19960632195 |
申请日期 |
1996.04.15 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
OKUDAIRA, TOMONORI;KUROIWA, TAKEHARU;FUJIWARA, NOBUO;KASHIHARA, KEIICHIRO |
分类号 |
H01L21/28;H01L21/02;H01L21/3205;H01L21/768;H01L21/822;H01L21/8242;H01L21/8246;H01L23/522;H01L27/04;H01L27/105;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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