发明名称 |
Method of manufacturing VDMOS with a termination structure |
摘要 |
<p>Forming a semiconductor device comprises: providing a semiconductor substrate having a first major surface, and a first conductivity type; forming a first insulated gate (IG) region and a second IG region on the substrate using a first photomasking step; forming a first doped region of a second conductivity type in the substrate through a first opening between the first and second IG regions, the first doped region self aligned to the first and second IG regions; forming a second doped region of the first conductivity type within the first doped region through the first opening, the second doped region self aligned to the first and second IG regions; forming a protective layer over the substrate; selectively patterning the protective layer using a second photomasking step to form a second opening within the first opening and a third opening above the second IG region; removing a portion of the substrate through the second opening and a portion of the second IG region through the third opening to expose a conductive portion; forming an ohmic layer over the substrate; and selectively patterning the ohmic layer using a third photomasking step to form a first ohmic contact to the semiconductor substrate and a second ohmic contact to the conductive portion. Also claimed is vertical power MOSFET device. Substrate is provided without a field oxide layer. Forming the first and second IG regions comprises: forming a gate dielectric layer over the first major surface; forming a conductive layer over the gate dielectric layer; forming an interlayer dielectric over the conductive layer; forming a first photoresist layer; patterning the photoresist layer using the first photomasking step; removing portions of the interlayer dielectric and portions of the conductive layer to form first and second IG regions; insulating exposed portions of the conductive layer, where the interlayer dielectric comprises a first silicon oxide/silicon nitride/second silicon oxide structure.</p> |
申请公布号 |
EP0782181(A2) |
申请公布日期 |
1997.07.02 |
申请号 |
EP19960119955 |
申请日期 |
1996.12.12 |
申请人 |
MOTOROLA, INC. |
发明人 |
TSOI, HAK-YAM;TAM, PAK;DE FRESART, EDOUARD D. |
分类号 |
H01L29/78;H01L21/336;H01L29/06;H01L29/40;H01L29/417;(IPC1-7):H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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