Semiconductor memory device and method for fabricating the same

摘要

A pair of electrically conductive regions of ruthenium dioxide are formed on a BPSG film covering DRAM memory cells arranged in a matrix form. The conductive region is extended in a column direction to be connected to one of impurity diffused regions of MOS transistors of the memory cells at contact holes, and also connected to one of impurity diffused regions of MOS transistors of column direction selection. Formed beneath the conductive region (capacitor upper electrodes) are capacitor lower electrodes connected to the other impurity diffused regions of the memory cell MOS transistors and a high-dielectric film. The conductive region is connected to a (+E,fra 1/2+EE )Vcc power supply. Since the upper electrodes and wiring lines of capacitors can be formed at the same time, the number of steps in a fabrication method can be reduced.