PRODUCTION OF GALLIUM NITRIDE COMPOUND SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To suppress the occurrence of the roughness on a substrate surface and to prevent the degradation in the crystallinity of a semiconductor layer by using a specific gas as an atmosphere gas at the time of vapor growth of the gallium nitride compd. semiconductor by using the prescribed substrate. SOLUTION: An inert gas which is preferably Ar, N2 or He is used as the atmosphere gas at the time of vapor growth right above the oxide of at least a periodic table group II element at the time of forming the gallium nitride compd. semiconductor by the vapor growth using the substrate of which at least the surface to be grown with the semiconductor layer consists of the oxide, more preferably ZnO of the periodic table group II element. The vapor growth is preferably effected by introducing a raw material carrier gas constituted by mixing gaseous raw materials (e.g.: trimethyl gallium and NH3 ) of the semiconductor layer and the inert gas into the vapor growth atmosphere.