| 摘要 |
PROBLEM TO BE SOLVED: To obtain a plasma CVD system in which the impurities can be removed from the surface of a substrate while suppressing the temperature difference between the surface and rear of substrate by disposing a substrate heater having a substrate on the surface thereof in parallel with a discharge electrode in a reaction vessel and disposing an infrared heater oppositely to the substrate heater. SOLUTION: In a reaction vessel 1, infrared heaters 10, 11 are disposed oppositely to a substrate heater 3 on the outside of a discharge electrode 2. A gas introduction tube 6 is inserted between the infrared heaters 10, 11. The discharge electrode 2 is fed with high frequency power from a high frequency power supply 4 through an impedance matching unit 5. A mixture gas of monosilane and hydrogen, for example, is introduced from a cylinder through a gas introduction pipe 6 from the rear side of discharge electrode 2. The introduced reaction gas passes through the discharge electrode 2 and fed between the discharge electrode 2 and substrate heater 3. Heat rays are radiated from the infrared heaters 10, 11 and the surface of discharge electrode 2 and a substrate 9 is heated along with the reaction gas. |
