发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent an upper wiring layer from sagging down in a connection hole region of large size. SOLUTION: A connection hole region 20 is composed of aggregate small square connection holes 22, the length S1 of the side of the small square hole 22 is twice or less as long as the thickness of the side film of an upper wiring 10. The length S1 may be 0.6μm or below when an aluminum high-temperature sputtered film of thickness 600nm is used as the upper wiring layer 10, and the length S1 may be 1.2μm or below when a blanket tungsten film of thickness 600nm is used as the upper wiring layer 10.
申请公布号 JPH09162290(A) 申请公布日期 1997.06.20
申请号 JP19950344471 申请日期 1995.12.04
申请人 RICOH CO LTD 发明人 UENO YOSHIKAZU
分类号 H01L21/302;H01L21/3065;H01L21/3205;H01L21/768;H01L23/52;H01L23/522;(IPC1-7):H01L21/768;H01L21/306;H01L21/320 主分类号 H01L21/302
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