| 摘要 |
The optoelectronic photodetector device in a waveguide with varied polarization consists of two photodetectors 1 and 2, a waveguide 3, a cathode contact 6 common to the photodetectors 1 and 2, an anode contact 5 for the second photodetector 2, the photodetectors 1 and 2 being coupled to the waveguide 3, their formation being simultaneous, the first photodetector 1 having as the absorbent zone a structure of one or more quantum wells that can be adapted in network or compression and the second photodetector 2, in addition to the structure of one or more quantum wells, has an additional layer of absorbent semiconductor as an absorbent zone at the wavelength of light. <IMAGE>
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