发明名称 AN INTEGRATED CMOS CIRCUIT
摘要 PCT No. PCT/EP96/04686 Sec. 371 Date Apr. 27, 1998 Sec. 102(e) Date Apr. 27, 1998 PCT Filed Oct. 28, 1996 PCT Pub. No. WO97/15952 PCT Pub. Date May 1, 1997A CMOS circuit (10), which is integrated in a semiconductor substrate, comprises a principal circuit part (12), which includes the major part of the circuit components in a well isolated from the substrate by a substrate diode. The CMOS circuit furthermore comprises a power output stage (16) driving an inductive load (26, 28). A sensor (18) is connected with one output (22, 24) of the power output stage (16) and on detection of a voltage biasing the substrate diode (30, 32) in the conducting direction produces a switching signal at the output. On occurrence of the switching signal produced by the sensor (18) a controllable switch (20) disconnects the supply voltage from the principal circuit part (12). In its own separate well (46) a status memory (14) is formed on the substrate adjacent to the principal circuit part (12), such status memory (14) comprising memory elements for storage of status data of the principal circuit part (12) on disconnection of the supply voltage.
申请公布号 WO9715952(A3) 申请公布日期 1997.06.12
申请号 WO1996EP04686 申请日期 1996.10.28
申请人 TEXAS INSTRUMENTS DEUTSCHLAND GMBH;SCOONES, KEVIN;HEINECKE, GUENTER;BAYER, ERICH 发明人 SCOONES, KEVIN;HEINECKE, GUENTER;BAYER, ERICH
分类号 H01L27/088;H01L21/8234;H01L27/092;H03K17/08;H03K17/695 主分类号 H01L27/088
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