发明名称 Memory test circuit
摘要 It is an object to reduce circuit scale and increase operation speed of a memory test circuit which performs a memory test according to the ping-pong pattern. An address signal of a remarked cell is generated by an LFSR (76) and address signals for other cells are generated by an LFSR (75). The LFSR (76) updates the generated address signal every time the LFSR (75) generates one cycle of address signals. The address signals of the LFSR's (75, 76) are alternately switched by a selector circuit (78) and outputted to a RAM (2A).
申请公布号 US5636225(A) 申请公布日期 1997.06.03
申请号 US19960608049 申请日期 1996.02.28
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 OSAWA, TOKUYA
分类号 G06F12/16;G06F11/22;G11C29/00;G11C29/02;G11C29/10;G11C29/12;G11C29/20;G11C29/56;(IPC1-7):G11C29/00 主分类号 G06F12/16
代理机构 代理人
主权项
地址