| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus for growing a silicon single crystal capable of growing a silicon single crystal rod without the formation of growth fringes. SOLUTION: A magnetic material ring 12 is integrally supported at part of the silicon single crystal rod 17 to be grown and plural pieces of electromagnets 8 are arranged in a growth furnace 1 along the pulling-up route of the silicon single crystal rod 17. The magnetic force in the pulling-up direction is generated in this magnetic material ring 12 by controlling the energization to these electromagnets 8, by which the increase in the load of a wire 7 accompanying the progression of the growth of the silicon single crystal rod 17 is prevented, the specified pulling-up speed is maintained and the formation of the growth fringes in the silicon single crystal rod 17 is prevented. |
