| 摘要 |
PROBLEM TO BE SOLVED: To provide a superluminescent diode, which reduces the reflectivity in the light emitting end surface of a semiconductor light-emitting device and moreover, can obtain a high gain and has a large luminous strength, even in an AlGaInP system, for example, by a method wherein the light emitting end surface is formed of a cleavage surface slanted at a specified angle to an optical waveguide direction. SOLUTION: The light emitting end surface of this semiconductor light- emitting device is formed of a cleavage surface slanted at 2 to 45 deg. to an optical waveguide direction. That is, the main surface 21a of this superluminescent diode is selected on the surface slanted at an angle (α) of 2 to 45 deg. from the crystal face (100) in the crystal axis direction [01-1] or the crystal axis direction [011], that is, the surface slanted at 2 to 45 deg. from the crystal face (100) centering around the crystal axis [011] or the crystal axis [01-1]. A semiconductor layer 31 is epitaxially grown on the main surface 21a of this substrate 21 and a semiconductor substrate 41 formed with a plurality of the semiconductor light- emitting, devices, that is, the superluminescent diode, is formed. |
