| 摘要 |
PROBLEM TO BE SOLVED: To increase and stabilize the sensitivity of a chemically amplifying resist film in a short time by supplying acid from an acid protective film deposited on a chemically amplifying resist film so as to replenish the acid which is trapped by a stabilizer in the chemically amplifying resist film. SOLUTION: A chemically amplifying positive resist film 10 is formed on a semiconductor substrate is. This positive resist consists of, for example, a material containing a novolac resin, acid producing agent, and dissolution inhibitor as the main component and contains trimethylsulfonium iodide as a stabilizer. Then an acid protective film 11 is formed on the positive resist film 10. The film 11 consists of isothianaphthene diyl sulfonate compd. and can increase the sensitivity of the positive resist film 10 for electron beams in a short time. This is because the acid trapped by trimethylsulfonium iodide in the stabilizer in the positive resist film 10 can be replenished by supplying acid from the acid protective film 11. |
