Method for forming damage-free buried contact

摘要

The present invention is related to a method for forming a damage-free buried contact. The method according to the present invention includes steps of a) providing a silicon substrate; b) forming an oxide layer on the silicon substrate; c) forming a first conductive layer on the oxide layer; d) defining a buried contact region on the first conductive layer on the first conductive layer; e) removing a portion of the first conductive layer according to a shape of the buried contact region; f) implanting ions in the buried contact region to form an ion-implantation region under the oxide layer; and f) removing a portion of the oxide layer to obtain the buried contact. The step f) can be executed either before or after the step f). The present invention provides a method for forming a buried contact by which trench will not be occurred on the silicon substrate during the etching process thereof, so that a damage-free buried contact can be obtained.