发明名称 |
Diode Chain with a Guard-Band |
摘要 |
The present invention provides an ESD protection device having at least one diode in a well of first conductivity type formed in a substrate of second conductivity type. The circuit further includes a guard band of the first conductivity surrounding at least a portion of the diode, thus forming an NPN transistor between diode cathode, the substrate and the guard-band.
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申请公布号 |
US2009040670(A1) |
申请公布日期 |
2009.02.12 |
申请号 |
US20080188376 |
申请日期 |
2008.08.08 |
申请人 |
VAN CAMP BENJAMIN;WYBO GEERT;VERLEYE STEFAAN |
发明人 |
VAN CAMP BENJAMIN;WYBO GEERT;VERLEYE STEFAAN |
分类号 |
H02H9/04;H02H3/20 |
主分类号 |
H02H9/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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