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发明名称
Lateraler zweifach diffundierter Fieldeffekttransistor mit einem isolierten Gate und Verfahren zur Herstellung
摘要
申请公布号
DE69218747(D1)
申请公布日期
1997.05.07
申请号
DE1992618747
申请日期
1992.12.23
申请人
TEXAS INSTRUMENTS INC., DALLAS, TEX., US
发明人
KWON, OH-KWONG DEPT.ELECTRONIC ENGINEERING,, SEONGDONG-KU,SEOUL 133, KR;MAHLI, SATWINDER, GARLAND, TX 75042, US;EFLAND, TAYLOR R., RICHARDSON, TX 75082, US;NG, WAI TUNG, THORNHILL, ONTARIO L3T 2V6, CA
分类号
H01L29/08;H01L29/78;(IPC1-7):H01L29/772;H01L29/41
主分类号
H01L29/08
代理机构
代理人
主权项
地址
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