| 摘要 |
PROBLEM TO BE SOLVED: To provide a thermoelectric semiconductor material of high manufacturing yield with easy doping control by containing solid solution powder of bismuth telluride and antimony telluride of constant grain diameter with no particulate under a specified value, as a main component. SOLUTION: First bismuth, antimony and tellurium are weighed, and the mixture of them is charged into a quartz tube, and then, the tube is exhausted of air with a vacuum pump and sealed. After the tube is heated for agitating and combining, the quartz tube is moved right under a freezing point for rapid cooling. Next, after the rapid-cooled ingot is crushed, heat treatment is processed. By the heat treatment. The particulate adhering to the surface of powder is separated/removed. So that monoconductor type power sintered body, containing the solid solution powder of bismuth telluride and antimony telluride of constant grain diameter containing no particulate under 5μm, as a main component, is formed. By this, a thermoelectric semiconductor material easily doping-controlled is obtained with good yield.
|
