METHOD FOR MANUFACTURING PRESSURE SENSOR

摘要

A method is described that uses a substrate joining technique and anisotropic etching characteristic of a silicon substrate to fabricate the detection part of a pressure sensor. The method includes of the steps of joining two substrates 201 and 202 having a crystal direction different from each other via an oxide layer 202, making one of the substrates 201 and 202 be the thin film having a thickness of a diaphram 207, forming a pressure receiving part 205 at a desired portion of the the substrates 201 using selective anisotropic etching, and etching the substrates 201 to form a space region 206 between the the substrates 201 and diaphram 207. Thereby, it is possible to form the detection part having a wider section area of diaphram 207 than that of the pressure receiving part 205.