| 摘要 |
PROBLEM TO BE SOLVED: To obtain electrodes, which are low in contact resistance, with little variation and are good in stability and heat resistance, by a method wherein an Au-Si-Ni film is adhered on an N-type III-V compound semiconductor substrate and after the film is processed into electrodes, the electrodes are subjected to heat treatment of two steps of a high temperature and a low temperature in a non-oxidizing atmosphere. SOLUTION: A film 2 about 3000Åthick and comprising 89wt.% of Au, 1wt.% of Si, and 10wt.% of Ni, is adhered on an N-type GaP substrate 1, which is heated to 100 to 200 deg.C and has a carrier concentration of 1 to 3×10<17> /cm<3> , by a vacuum evaporation method. Then, the film 2 is processed into about 60-μm diameter circular electrodes 3 by a photoetching method using a KI-I2 aqueous solution as its etchant. Moreover, after being heat-treated for 30 seconds to 120 minutes at a temperature of 520 to 620 deg.C in an Ar atmosphere, the electrodes 3 are heat-treated for 30 seconds to 120 minutes at a temperature of 350 to 480 deg.C or are cooled in a furnace to about 80 deg.C at a cooling-down rate of 5 to 100 deg.C/minute. Thereby, electrodes, which are low in contact resistance with little variation and are good in stability and heat resistance, are obtained.
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