| 摘要 |
In a static random access memory device including a flip-flop having first and second load thin film transistors (T1, T2) whose drains are connected via first and second transfer bulk transistors (Qt1, Qt2) to first and second bit lines (BL1, BL2), respectively, the second bit line is arranged over the first load thin film transistor, and the first bit line is arranged over the second load thin film transistor. <MATH> |
