| 摘要 |
PROBLEM TO BE SOLVED: To provide a heterojunction thin film solar cell wherein cadmium is not contained, conversion efficiency is high, and manufacturing cost is low, and its manufacturing method. SOLUTION: An amorphous silicon semiconductor thin film 5 which has optical transparency and high resistance is grown as an interface layer (or a buffer layer), by using photo excited chemical vapor deposition method (photo CVD method), on the interface between a first multiple compound semiconductor thin film 4 on a metal back electrode layer 3 which has a p conductivity type and is offered as a light absorbing layer, and a second metal oxide semiconductor thin film 6 which has an n conductivity type, is offered as a window layer, and has wide forbidden band width, transparency and conductivity. The semiconductor thin film 5 is constituted of an intrinsic amorphous silicon semiconductor single film containing no dopant or a laminated film of an intrinsic amorphous silicon semiconductor thin film and an N-type amorphous silicon semiconductor thin film formed thereon. |
