| 摘要 |
PROBLEM TO BE SOLVED: To naturally insulate storage nodes from each other by forming the storage nodes by patterning a conductive film on a semiconductor substrate and selectively growing lower electrodes on the storage nodes, and then, successively forming a dielectric film and an upper electrode on the lower electrodes. SOLUTION: After an insulating film 101 having contact holes is formed on a semiconductor substrate 100, a conductive film is formed so that the film can fill up the contact holes. Then, after forming the storage nodes 102 of a capacitor are formed by patterning the conductive film, the lower electrodes 105 of the capacitor composed of a metallic compound having a high melting point are selectively grown on the nodes 102. Thereafter, the dielectric film 103 and upper electrode 104 of the capacitor are successively formed on the surface of the electrodes 105. Therefore, the storage nodes 102 can be insulated naturally from each other without requiring any additional photographic process. |
