Verfahren zum Erzeugen der Sourcebereiche eines Flash-EEPROM-Speicherzellenfeldes

摘要

Field insulation is provided in a flash storage cell (1) by an oxide-polysiliconoxide sandwich insulating structure (11, 12, 13). The implantation of doping substances self-adjusted in relation to the word lines (6) of two adjacent storage cells to generate the source regions (3) and source connection tracks provides a small area for the storage cell (1). The field insulation of the invention generates a capacity between the doping region (8) and the polysilicon layer (12) of the insulation layer which improves the read characteristic of the storage cell (1).