MOSFET on semiconductor substrate manufacturing method

摘要

The method involves using a semiconductor substrate, having a dielectric layer (156) deposited on the source and drain regions as well as a polysilicon gate (136), compacted by heating. The dielectric layer is removed from the gate and a metal film (160) applied on top of them. Pref. the dielectric layer removal over the gate is carried out by etching. Outside of the gate, the metal film may be removed, also by etching. The dielectric layer application starts with forming a gate oxide layer on the substrate, followed by polycrystalline silicon deposition and etching.