| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent the occurrence of pitting except in the photoresist in the edge section of a wafer by exposing the photoresist to nonpatterned blank light and successively exposing the photoresist in the effective area of the wafer in which a pattern is to be formed to patterned light, and then, removing the photoresist from the edge section. SOLUTION: The photoresist in the edge section 4 of a wafer is exposed to light by using a nonpatterned blank reticle, because no pattern is formed in the section 4. Then the photoresisit in the effective area 5 of the wafer where a pattern is to be formed is exposed to light by using a reticle having a prescribed pattern. When the exposed photoresist is developed by dipping the wafer in a developing solution, the exposed photoresist is removed. Namely, the photoresist is completely removed from the edge section 4 and only left in the effective area 5. Therefore, the occurrence of pitting can be prevented.</p> |
