| 摘要 |
<p>A semiconductor laser device comprises: a semiconductor laser chip 100a ; a heat sink 200a on which said semiconductor laser chip 100a is mounted via a solder layer 8 ; a lower electrode formed on said semiconductor laser chip 100a comprising a layer 7b which is non-alloyed with the solder layer 8, and within prescribed distances from direct below the center line in the longitudinal direction of the light emitting region 5 of the laser, and layers 7c alloyed with the solder layer 8. The structure reduces the internal stress generated due to the difference in coefficients of the thermal expansion between the laser chip 100a and the heat sink 200a at the light emitting region 5. In other arrangements, the solder layer has a gap or is of lower melting point beneath the region 5.</p> |
