| 摘要 |
(a) The n-buffer layer(23) is formed by depositing the n-GaAs on the n-GaAs plate, and the n-clad layer(25) is formed on that. (b) The active layer(27) not dopping on the upper part of the n-clad layer, and the p-clad layer(31) is formed on that. (c) The zinc spreading protection layer(29) having the superlattice structure of AlGaInP/GaIn is inserted in the active layer and the p-clad layer. (d)The p-buffer layer(33) and the p-cap layer is formed on the upper part of the p-clad layer. |
