| 摘要 |
PROBLEM TO BE SOLVED: To provide the high brightness light emitting semiconductor device capable of cutting down the occurrence of any wasteful light-shielding. SOLUTION: In order to form a P layer 5 on a substrate whereon a GaAs PN layer 7 is formed on a GaP base substance, a silicon nitride film 3 is provided to form a PN junction cavity part 9 while the central part of an electrode 4 is arranged on the substrate of the silicon nitride film 3 to connect the end edge or a branch part connecting to the central part of the electrode 4 on the surface of a silicon nitride film 3 for the connection of the title light emitting semiconductor device so that the light emission beneath the central part of the electrode 4 may be eliminated to improve the current density at the PN junction surface 6 for enhancing the current density on the PN junction surface 6 to increase the light quantity excternally emitted. |
