| 摘要 |
<p>PROBLEM TO BE SOLVED: To optionally control the magnetic properties of a magnetostriction thin film by subjecting a magnetostriction thin film on a substrate to be grown in a vapor phase to heat treatment. SOLUTION: A magnetostriction material is grown in a phase on a substrate to produce a magnetostriction thin film. For example, as a film forming method, ion beam sputtering is used, an ion beam 2 is generated by an ion source 1, and a target 3 composed of a magnetostriction material is sputtered to film-form the magnetostriction material on a substrate 4. At this time, the magnetostriction thin film is subjected to heat treatment in the process or after the film forming. Thus, the magnetic properties of the magnetostriction material can optionally be controlled. As for the means of the heat treatment, thermal conduction or radiation may be executed, and furthermore, heating by accelerated high energy grains or electron beams may be executed. The heat treating temp. is preferably regulated to 200 to 1,300 deg.C.</p> |
