| 摘要 |
<p>A process for preparing a thin-film transistor (TFT) comprising a channel region connected to a source region and a drain region and a gate electrode facing the channel region through a gate insulating film, wherein, in the step of forming the gate insulating film, tetraethoxysilane is used as the raw material gas for feeding silicon and silicon oxide is formed by plasma chemical vapor deposition under such a condition that the distance between electrodes for generating plasma is not more than 15 mm. By virtue of this construction, a process for producing TFT can be provided which, despite a low-temperature process, can form a gate insulating film excellent in the behavior of charges and having a high quality on a large-area substrate in an even film thickness at a high film forming rate.</p> |
