发明名称 ALUMINUM NITRIDE SINTERED COMPACT AND ITS PRODUCTION AND DEVICE FOR PRODUCING SEMICONDUCTOR
摘要 PROBLEM TO BE SOLVED: To obtain an aluminum nitride sintered compact byreducing its color value and bringing its color close to black without adding a metallic compound such as a sintering assistant or a blackening agent, especially a heavy metal compound thereto. SOLUTION: This aluminum nitride sintered compact is defined by the fact that a carbon peak is detected at 2&theta;=44 deg.-45 deg. X-ray diffraction angle other than the aluminum nitride peak of a main crystalline phase in the X-ray diffraction chart of the main crystalline phase of the aluminum nitride sintered compact. Preferably, the crystalline phase of the aluminum nitride sintered equips the main crystalline phase of AIN, a sub-crystalline phase consisting of ALONE and a carbon phase, substantially is free from (AIN)x (Al2 OC)1-x phase, and has <=4 color value prescribed in JIS Z 8721, and the ratio of carbon atoms contained in the aluminum nitride sintered compact is 500ppm-5000ppm.
申请公布号 JPH0948668(A) 申请公布日期 1997.02.18
申请号 JP19950218158 申请日期 1995.08.03
申请人 NGK INSULATORS LTD 发明人 KOBAYASHI HIROMICHI;BESSHO HIROKI;MORI YUKIMASA
分类号 H05B3/20;C04B35/581;C04B35/626;H01L21/205;H01L21/302;H01L21/3065;H01L21/324;H05B3/02 主分类号 H05B3/20
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