| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent the variance and dielectric strength deterioration of an auxiliary capacitor integrated and formed at the same time with a bottom gate type thin film transistor(TFT). SOLUTION: A pixel electrode 1, the TFT 2 which supplies signal charges to the pixel electrode 1, and the auxiliary capacitor 3 which hold the supplied signal charges subsidiarily are integrated and formed on an insulating substrate 4. The TFT 2 has bottom gate type structure equipped with a gate electrode 5 patterned and formed on the insulating substrate 4, a gate insulating film 6 formed thereupon, a semiconductor thin film 7 formed thereupon to constitute a channel part Ch, and a drain electrode 8 and a source electrode 9 which are connected to the channel part Ch. The auxiliary capacitor 3 has laminate structure obtained by stacking a lower electrode 12 in the same layer with the gate electrode 5, a dielectric film 13 in the same layer with the gate insulating film 6, and an upper electrode 15 in order. This upper electrode 14 is interposed between the pixel electrode 1 and drain electrode 8 which are separated from each other to electrically connect them to each other and also constituted in the same layer with the semiconductor thin film 7.</p> |
