| 摘要 |
PROBLEM TO BE SOLVED: To eliminate an organic thin film by increasing a selection ratio to a ground film. SOLUTION: A gas for ashing where NH3 gas is mixed to O2 gas and CHF2 gas is introduced into a plasma generation room 9, plasma is generated by introducing microwave, and an organic thin film (resist) 6 formed on a-Si film as a ground film on a body 3 to be treated by an active seed generated by the plasma is eliminated. At this time, ammonium salt is formed on the a-Si film to prevent etching to the a-Si film. |
