发明名称 MANUFACTURE FOR X-RAY REFLECTION TYPE MASK
摘要 <p>PROBLEM TO BE SOLVED: To provide a manufacturing method for an X-ray reflection type mask which provides the X-ray reflection type mask having an accurate reflec tion pattern with high efficiency. SOLUTION: An X-ray reflection multilayer film 2 is formed an a substrate 1, further an X-ray absorption layer 3a having a specified pattern is formed on the multilayer film 2, in order for manufacturing a temporary X-ray reflection type mask. A defective part and a useless part of the X-ray absorption layer 3a are detected, and a resist pattern 4a is so formed on the surface of temporary X-ray reflection type mask that only the defective part is exposed, and then the X-ray absorption layer 3a is formed on the defective part by electrolytic plating or electroless plating method. And, a resist pattern 4b is so formed on the surface of temporary X-ray reflection type mask so that only the useless part is exposed, and the X-ray absorption layer 3b on the useless part is removed by electrolytic polishing.</p>
申请公布号 JPH0922862(A) 申请公布日期 1997.01.21
申请号 JP19950171982 申请日期 1995.07.07
申请人 NIKON CORP 发明人 WASA WAKANA;MURAKAMI KATSUHIKO;SHIMIZU SUMUTO
分类号 G21K1/06;G03F1/22;G03F1/24;H01L21/027;(IPC1-7):H01L21/027;G03F1/16 主分类号 G21K1/06
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