MANUFACTURE OF NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device manufacturing method enabling the reduction of the delivery time. SOLUTION: On a main face of a Si substrate 11 a memory cell array is formed which is composed of MOS memory cell transistors 10 disposed thereon, each having a source region 16 and drain region 17 formed with specified spacing and gate electrode 15 formed on a channel region 24 through a gate oxide film. On the memory cell array an interlayer insulation layer 18 is formed and metal interconnection layer 21 of specified pattern is formed on this layer 18. Then the insulation film 18 within a region corresponding to the region 24 is etched to form ion-implanting holes 25 through which ions are implanted into the channel regions 24 of arbitrary MOS transistors 10 among the memory cell array, thereby depressing them.