发明名称 |
Large tilt angle boron implant methodology for reducing subthreshold current in NMOS integrated circuit devices |
摘要 |
A semiconductor structure with large tile angle boron implant is provided for reducing threshold shifts or rolloff at the channel edges. By minimizing threshold shifts, short channel effects and subthreshold currents at or near the substrate surface are lessened. The semiconductor structure is prepared by implanting boron at a non-perpendicular into the juncture between the channel and the source/drain as well as the juncture between the field areas and the source/drain. Placement of boron into these critical regions replenishes segregating and redistributing threshold adjust implant species and channel stop implant species resulting from process temperature cycles. Using lighter boron ions allow for a lesser annealing temperature and thereby avoids the disadvantages of enhanced redistribution and diffusion caused by high temperature anneal.
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申请公布号 |
US5593907(A) |
申请公布日期 |
1997.01.14 |
申请号 |
US19950400609 |
申请日期 |
1995.03.08 |
申请人 |
ADVANCED MICRO DEVICES |
发明人 |
ANJUM, MOHAMMED;KOOP, KLAUS H.;KYAW, MAUNG H. |
分类号 |
H01L21/265;H01L21/336;H01L29/423;H01L29/78;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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