Surge absorber

摘要

A surge absorber composed of a surge absorbing element comprising a silicon two-terminal thyristor element having a PNPNP or NPNPN junction structure and a bulk resistance element 12 comprising a material having a resistivity within a range of from 10-4 OMEGA xcm to 103 OMEGA xcm and having a resistance value within a range of from 5 OMEGA to 50 OMEGA , these elements being connected in series to form an integral body is disclosed. The inventive surge absorber requires reduced manhours for its production and is of a small size, but yet provides a large surge capacity.