发明名称 FORMATION METHOD OF FINE PATTERN AND FINE WORKING METHOD
摘要 PURPOSE: To effectively form an ultra-fine pattern by applying pressure to part of a thin film of an organic high polymer material soluble to an organic solvent provided on a substrate to make the same insoluble, and thereafter selectively dissolving and removing part of the thin film not pressurized with an organic solvent. CONSTITUTION: After an organic high polymer material thin film 2 is provided on a substrate 1, it is pressurized and subjected to organic solvent treatment whereby only pressurized part of the organic high polymer material thin film 2 is left behind on the substrate 1 to form a fine pattern 3. As the organic solvent to solve and remove the organic high polymer material thin film of part not pressurized, acetone, etc., are used when the high polymer material comprises polymethylmethacrylate. As the method to apply pressure onto the high polymer material thin film there is used a method of scratching the high polymer material with a needle, and pressure preferably ranges from 1 to 20GPa when it is scratched with a 12μm diameter diamond needle.
申请公布号 JPH08316197(A) 申请公布日期 1996.11.29
申请号 JP19950115531 申请日期 1995.05.15
申请人 AGENCY OF IND SCIENCE & TECHNOL 发明人 TADA TETSUYA;KANAYAMA TOSHIHIKO
分类号 H01L21/302;C23F1/00;G03F7/00;H01L21/3065;(IPC1-7):H01L21/306 主分类号 H01L21/302
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