PREPARATION OF MOS INTEGRATED CIRCUIT HAVING PART WITH DIFFERENT INSULATING MATERIAL

摘要

PROBLEM TO BE SOLVED: To intrinsically improve a resistance with respect to the degradation of an oxide caused by electric charges passing through a cell oxide during a memory operation, when a thin thermal oxide is formed in a memory cell and in the region of the parts of the other periphery circuit of the memory. SOLUTION: An oxide is nitrided at high temperature. As a modification, a nitrided oxide formed in the region which is formed for manufacturing parts of a peripheral circuit is removed, then a similar thermal oxidation treatment is performed, for a later high-temperature nitriding.