| 摘要 |
<p>PURPOSE: To make it possible to measure the physical quantity of temperature and the others in a vacuum device without adding any alteration to the vacuum device and to make it possible to start the intrinsic work of the vacuum device immediately after the measurement. CONSTITUTION: A sampling circuit, a control pulse waveform formation circuit, a drive part, a demodulation part and a control part are formed in a silicon wafer 30 as an integrated circuit 26 according to the process of a CMOS device. Photocells 24, a liquid crystal optical switching module 4 and temperature detecting parts 2a, which are respectively formed using a platinum resistor, are formed on the wafer 30 via an interlayer insulating film consisting of a silicon nitride film. A quartz spacer is bonded on the photocells 24, the switching module 4 and the detecting parts 2a, a quartz plate 32, which is formed into the same plane form as that of the wafer 30 and has a thickness of 0.3mm, is laminated on the quartz spacer with an epoxy bonding agent and a sapphire thin film 34 is formed on the plate 32 as an etching-resisting film by a sputtering method.</p> |
