| 摘要 |
A low noise amplifier (LNA)/mixer/frequency synthesizer circuit for the front end of a RF system. The LNA/mixer/frequency synthesizer circuit is fabricated as an integrated circuit utilizing 0.6 mu M CMOS technologies. The LNA within the circuit is provided a bias current from a power supply. Due to the CMOS construction of the LNA, a significant amount of unused power is available within the LNA. The frequency synthesizer requires the same bias current as does the LNA. The frequency synthesizer is directly coupled to the LNA, wherein the unused bias current of the LNA is used to supply the required bias current to the oscillators within the frequency synthesizer. Since the bias current used by the frequency synthesizer is drawn from the surplus of the LNA, a RF system front end is provided that has greatly reduced power requirements. The LNA is coupled to the frequency synthesizer, via an inductor. The inductor provides resonance to a node between the LNA and the frequency synthesizer that joins to the mixer. The inductor suppresses band harmonics while preserving the unused bias current.
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