| 摘要 |
A helicon wave plasma producing section is provided in the top area of process chamber, and ICP (Inductively Coupled Plasma) producing section is provided in the area on the downstream side thereof. Source power is supplied from a common plasma excitation RF power supply through control means to loop antenna in the former and multi-turn antenna in the latter. Thus, helicon wave plasma diffused from a bell-jar and inductively coupled plasma newly dissociated and produced by inductively coupled discharge are caused to coexist to carry out plasma processing, thereby making it possible to conduct control of ion/radical production ratio. Thus, higher accuracy plasma processing can be carried. Further, when applied to dry etching, ion assist mechanism is caused to effectively function to permit implementation of satisfactory high speed anisotropic processing as well.
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